| PART |
Description |
Maker |
| GC4270 GC4271 GC4220 GC4211 GC4212 GC4222 GC4223 G |
TM CONTROL DEVICES - HIGH SPEED PIN DIODES
|
Microsemi Corporation
|
| 2SA1721 E000549 |
From old datasheet system
HIGH VOLTAGE CONTROL APPLICATIONS PLASMA DISPLAY
TRANSISTOR (HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS
|
Toshiba Semiconductor
Toshiba Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| MAX8904ETNTGC5 |
High-Efficiency Power-Management IC with I²C Control for 2-Cell Li Battery Operated Devices
|
MAXIM - Dallas Semiconductor
|
| CS20-25MO1F |
High Voltage Phase Control Thyristor in High Voltage ISOPLUS i4-PAC
|
IXYS Corporation
|
| 2SA1432 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS.
|
TOSHIBA
|
| 6ED1055-1 6ED1057-4 6ED1058 6ED1052-1 6ED1052-2 3T |
Monitoring and Control Devices
|
List of Unclassifed Manufacturers
List of Unclassifed Manufac...
List of Unclassifed Man...
|
| MAX16831 MAX16831ATJ |
High-Voltage, High-Power LED Driver with Analog and PWM Dimming Control
|
Maxim Integrated Products
|
| MAX1683109 MAX16831ATJ |
High-Voltage, High-Power LED Driver with Analog and PWM Dimming Control
|
Maxim Integrated Produc...
Maxim Integrated Products
|
| SSC1000-25-12 SSC800-25-24 |
Solid-State Panel Mount Relay; Output Device:IGBT; Output Voltage Max:1000VDC; Control Voltage Max:16VDC; Control Voltage Min:8VDC; Load Current Max:25A; Switching:DC Switch; Capacitance:50; Control Voltage (Nominal):12
Solid-State Panel Mount Relay; Output Device:IGBT; Output Voltage Max:800VDC; Control Voltage Max:28VDC; Control Voltage Min:20VDC; Load Current Max:25A; Switching:DC Switch; Capacitance:50; Control Voltage (Nominal):24
|
CRYDOM CORP
|
